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Proper derivation of CH₃NH₃PbX₃(MAPbX₃; where X = Cl⁻, Br⁻, I⁻) optical constants is a critical step toward the development of high‐performance perovskite devices. To date, the optical dispersions at all wavelengths have been inconsistently characterized by under‐approximating or omitting anomalous spectral features. Herein, a rigorous optical dispersion data analysis of single‐crystal MAPbBr₃involving variable‐angle spectroscopic ellipsometry data appended with transmission intensity data is presented. This approach yields a more robust derivation of the refractive index and extinction coefficient for both anomalous (absorptance) and normal (no absorptance) optical dispersion regimes. Using the derived optical constants, illustrative modeled perovskite solar cell device designs are presented in relation to nonrealistic designs prepared using representative optical constants reported in the literature. In comparison, the derived optical constants enables the modeling of layer thicknesses to maximize absorption by the active layer (MAPbBr₃) and minimize parasitic optical absorptance by the nonactive layers at broad angles of incidence (≈0°–70°). This robust derivation of MAPbBr₃optical constants is expected to impact the optical dispersion data analysis of all perovskite analogs and expedite targeted development of, for example, solar cell, light‐emitting diode, photo‐ and X‐ray/γ‐ray detector, and laser system technologies.

 

In this paper, we investigate the effects of operational conditions on structural, electronic and electrochemical properties on molybdenum suboxides (MoO3-δ) thin films. The films are prepared using pulsed-laser deposition by varying the deposition temperature (Ts), laser fluence (Φ), the partial oxygen pressure (PO2) and annealing temperature (Ta). We find that three classes of samples are obtained with different degrees of stoichiometric deviation without post-treatment: (i) amorphous MoO3-δ (δ < 0.05) (ii) nearly-stoichiometric samples (δ ≈ 0) and (iii) suboxides MoO3-δ (δ > 0.05). The suboxide films 0.05 ≤ δ ≤ 0.25 deposited on Au/Ti/SiO2/flexible-Si substrates with appropriate processing conditions show high electrochemical performance as an anode layer for lithium planar microbatteries. In the realm of simple synthesis, the MoO3-δ film deposited at 450 °C under oxygen pressure of 13 Pa is a mixture of α-MoO3 and Mo8O23 phases (15:85). The electrochemical test of the 0.15MoO3-0.85Mo8O23 film shows a specific capacity of 484 µAh cm−2 µm−1 after 100 cycles of charge-discharge at a constant current of 0.5 A cm−2 in the potential range 3.0-0.05 V. 

With the astonishing advancement of present technology and increasing energy consumption, there is an ever‐increasing demand for energy‐efficient multifunctional sensors or transducers based on low‐cost, eco‐friendly material systems. In this context, self‐assembled vertically alignedβ‐Ga_2−xW_xO₃nanocomposite (GWO‐VAN) architecture‐assisted self‐biased solar‐blind UV photodetection on a silicon platform, which is the heart of traditional electronics is presented. Utilizing precisely controlled growth parameters, the formation of W‐enriched verticalβ‐Ga_2−xW_xO₃nanocolumns embedded into the W‐deficientβ‐Ga_2−xW_xO₃matrix is reached. Detailed structural and morphological analyses evidently confirm the presence ofβ‐Ga_2−xW_xO₃nanocomposite with a high structural and chemical quality. Furthermore, absorption and photoluminescence spectroscopy explains photo‐absorption dynamics and the recombination through possible donor–acceptor energy states. The proposed GWO‐VAN framework facilitates evenly dispersed nanoregions with asymmetric donor energy state distribution and thus forms build‐in potential at the verticalβ‐Ga_2−xW_xO₃interfaces. As a result, the overall heterostructure evinces photovoltaic nature under the UV irradiation. A responsivity of ≈30 A/W is observed with an ultrafast response time (≈350 µs) under transient triggering conditions. Corresponding detectivity and external quantum efficiency are 7.9 × 10¹²Jones and 1.4 × 10⁴%, respectively. It is believed that, while this is the first report exploiting GWO‐VAN architecture to manifest self‐biased solar‐blind UV photodetection, the implication of the approach is enormous in designing electronics for extreme environment functionality and has immense potential to demonstrate drastic improvement in low‐cost UV photodetector technology.